Study of the high-frequency performance of III-As nanojunctions using a three-dimensional ensemble Monte Carlo model

We apply a well-calibrated three-dimensional Monte Carlo simulator using finiteelement meshing to study the intrinsic high-frequency (HF) behaviour of three-terminal nanojunctions based on InGaAs/InAlAs heterostructures. To obtain a reliable prediction of device performance, we use a realistic model for surface charge effects at high-frequency conditions. In this work, we perform an analysis of the dynamics of electron transport in the devices and present a prediction of their intrinsic HF performance. The results demonstrate the suitability of these nanostructures for application in the terahertz regime, and illustrate the influence of surface charge effects in this frequency range.